For use with SEM, FIB, XPS/ESCA, Auger, and LM.
This conductive silicon substrate is marked by DRIE and features a (144) 1 x 1 mm alphanumeric field defined by 5 µm deep x 20 µm wide trenches.
- Combines the qualities of a flat specimen support and an SEM finder grid
- Same low background signal as silicon chips
- Easily mounts to most popular sizes of SEM sample stubs
Specifications
| Die Size |
12.5 mm x 12.5 mm |
| Substrate Size |
20 mm x 20 mm |
| Material |
Prime Virgin Silicon Wafer, P Boron Dropped |
| Thickness |
645 µm ± 55 µm |
| Orientation |
<100> |
| Resistivity |
0.5-35 ohm/cm |