Plasma Cleaners, Plasma Etchers, Reactive Ion Etcher, Ion Beam Sputter
Plasma Cleaner – Model PC2000
The PC2000 is designed to simultaneously clean the specimen and specimen stage, which minimizes, and in many cases, eliminates contamination of the specimen being analyzed. The specimen holder and specimen are subjected to reactive gas plasma prior to electron microscope analysis.
It has been well documented that low energy plasmas can be used to reactively etch or remove organic materials found on the surface of inorganic materials. This technology has been used by the industrial community to clean semiconductor wafers and optical materials for many years. A related technique is now being implemented in the field of electron microscopy, where specimens can become contaminated during the preparation process or from other sources. Current analytical instruments use tightly focused, intense beams that create carbon deposits on the specimen surface due to organic contamination.
Procedure
Plasma cleaning with the Model PC2000 involves subjecting the specimen and/or specimen stage to a reactive gas plasma that efficiently removes organic contamination from the surfaces exposed in the plasma. The procedure may be carried out prior to inserting the specimen and specimen stage into the EM by either mounting the specimen holder in one of the supplied ports or by inserting the entire sample or sample assembly through the hinged upper port and into the 8”OD x 4” high chamber. The system can be used with any side entry TEM holders, top entry TEM holders, or with any sample that will fit inside the chamber. For most applications nominally pure argon followed by nominally pure oxygen is used for plasma cleaning. However, the PC2000 allows a variety of gas species to be used, allowing the user to tailor specific reactions for a given specimen material. Cleaning times are typically a matter of minutes, which generally allows specimens to be studied for several hours.
Control Panel
The PC2000 control panel allows the user to control and monitor every aspect of the plasma cleaning process directly from the front panel. The control panel integrates display and control of critical process related data with a straightforward and intuitive interface. Independent front panel controls for 2 gas inlets, forward power, tuning, RF Power and process time along with a DC bias display provide complete control over the entire process. While the RF, gas and vacuum controls are fully interlocked for user and lab safety, the system parameters can be easily changed from run to run or during a process run to optimize the desired effect. While complete control over every aspect of the process can be changed on the front panel, repetitive process runs can be easily duplicated using a simple 3 button sequence.
While the PC2000 offers all of the flexibility and functionality required in a research instrument, it does so with a thoughtfully designed interface that makes the system ideal for multi-user environments.
Special Features
- Suitable for all side entry and top entry TEM holders. Large chamber also accommodates specimens up to 7" diameter and 3" high for cleaning tweezers, specimen mounts, etc.
- Digital LCD displays, indicate forward power in watts, reflected power, DC bias and vacuum level.
- Compatible with Argon, Oxygen, CF4, and other gas mixtures.
- System comes standard with 3 ports which allow simultaneous cleaning of multiple holders or insertion of analytical tools into the plasma chamber.
- Power level can be optimized for each specimen type and gas species to maximize cleaning rate without risk of etching the specimen stage or the chamber2.
- Viewport allows easy monitoring of the process.
- Safety interlocked controls simplify operation - ideal for multi-user environments.
Specimen Storage and Transfer
Once the samples have been cleaned, they can be inserted into a Vacuum Storage Container for transport to the microscope. The specimen holders can also be stored in these containers for an indefinite period preventing further contamination. The vacuum storage containers can also be mounted on the Vacuum Pumping Station manifold for evacuating multiple holders. Once evacuated, the containers can be maintained under vacuum or backfilled with dry nitrogen or other suitable gas while mounted on the Vacuum Pumping Station.
Plasma Trimming™
Plasma TrimmingTM is a technique by which material is removed from a TEM specimen by use of a moderate energy Ar plasma discharge. By using an Ar gas plasma, the sample can be thinned in a very slow and controlled manner. This allows further thinning of specimens that have been previously ion or FIB milled to remove surface damage, ion milling defects or surface artifacts5.
Vacuum Pump
The PC2000 uses a corrosive series 2-stage rotary vane pump charged with an inert vacuum fluid that is safe for use with oxygen, resistant to attack by corrosive gas species and has a low vapor pressure. Studies have shown that the proper use of a rotary pump combined with an inert vacuum fluid provides a safe and contamination free environment for plasma cleaning1.
References
1. Surface Science Aspects of Contamination in TEM Sample Preparation, J.T. Grant, S.D. Walck, F.J. Scheltons, A.A. Voevodin, Materials Research Society Vol. 480 1997.
2. Application of Reactive Gas Plasma Cleaning in Mitigating Contamination of Specimens During Transmission and Analytic Electron Microscopy, Shane P. Roberts, Scott D. Walck, John T. Grant, Nestor J. Zaluzec, Materials Research Society Vol. 480 1997.
3. Reactive Gas Plasma Specimen Processing for use in Microanalysis and Imaging in Analytical Electron Microscopy, Nestor J. Zaluzec, Bernard J. Kestel, David Henriks, Microscopy & Microanalysis 1997.
4. Simultaneous Specimen and Stage Cleaning for Analytical Electron Microscopy, David Henriks, Microscopy Today issue 96-8 October 1996 pgs. 16-17.
5. In-Situ Transformation of a Zinc TEM Lift-Out Specimen, B.I. Prentizer, S. Collins, and L.A. Giannuzzi
Specifications
Control Panel
| Readouts: | Digital LCD displays for forward power in watts |
| Forward Power Control: | 1-150 watts, adjustable |
| Reflected Power Control: | Manually adjustable, 180 degree potentiometer |
| DC Bias: | Digital LCD display |
| Electronics: | Solid state, crystal controlled, 199kHz switchmode DC power converter to RF generator |
| Termination: | Digital interlocked timer or manual termination |
Interlocks: |
RF, gas and vacuum fully interlocked for user & lab safety. |
Vacuum System
| Mechanical Pump: | Corrosive series 2-stage rotary vane pump |
| Base Pressure: | 2x10-2 torr |
| Time to Reach Base Pressure: | 30 seconds |
| Operating Pressure: | User variable (200 millitorr typical) |
| Pump Access: | Fully accessible, remote mount, KF-25 connection, all hoses & fittings provided |
| Activation: | Front panel LED "ON" indicator |
| Vacuum Sensor/Readout: | Capacitance manometer and digital LCD readout |
| Gas Delivery and Control: | Dual independent needle valves with safety interlock solenoid |
| System Vacuum Vent: | Independent solenoid interlocked with connection for dry nitrogen |
Chamber
| Size: | 8"OD x 4" high stainless steel electropolished cylinder with viewport |
| Electrode: | Immersed stainless steel |
| Specimen Interface: | "No Tools" quick connect for all side and top entry TEM holders. Top entry holders mounted through hinged top port. |
System Specifications
| System Weight: | Less than 60 lbs. (without vacuum pump) |
| Dimension: | 22"W x 14"D x 18"H |
| Power Requirements: | 110/220 VAC single phase, 5 amps (at 120VAC) |
| Cooling: | Water cooled |
| RF: | 13.56 MHz frequency, 150 watts forward power |
| WARRANTY: | [2] year Limited Warranty |
Ordering
| 55300 | Plasma Cleaner- Model PC 2000 | each | 48,090.00 | Add to Cart |
Spare Parts and Accessories for PC 2000
| 55300-1 | Specimen Stage Adapter for JEOL side entry holders (for 100CX) | each | 425.00 | Add to Cart |
| 55300-2 | Specimen Stage adapter for JEOL side entry holders (1210,1220,1230,2010,2010F, 3010, 3000F & 4010) | each | 425.00 | Add to Cart |
| 55300-3 | Specimen Stage Adapter for Philips, side entry holder | each | 425.00 | Add to Cart |
| 55300-4 | Specimen Stage Adapter for Zeiss, side entry holders | each | 425.00 | Add to Cart |
| 55300-5 | Specimen Stage Adapter for Hitachi, side entry holders | each | 425.00 | Add to Cart |
| 55300-6 | Specimen Stage Adapter for LEO, side entry holders | each | 425.00 | Add to Cart |
| 55300-7 | Specimen Stage Adapter for Topcon, side entry holders | each | 425.00 | Add to Cart |
| 55300-8 | Specimen Stage Adapter, Blank for customer applications | each | Add to Cart | |
| 55300-20 | Specimen Stage Adapter for Hitachi, top entry holders | each | 425.00 | Add to Cart |
| 55300-21 | Specimen Stage Adapter for VG, top entry holders | each | 425.00 | Add to Cart |
| 55300-22 | Specimen Stage Adapter for other top entry holders | each | Add to Cart | |
| 55300-30 | Vacuum Storage Container for JEOL, side entry holders (100X) | each | 475.00 | Add to Cart |
| 55300-31 | Vacuum Storage Container for JEOL, side entry holders (1210, 1220, 1230, 2010, 2010F, 3010, 3000F, 40100) | each | 475.00 | Add to Cart |
| 55300-32 | Vacuum Storage Container for Philips, side entry holders | each | 475.00 | Add to Cart |
| 55300-33 | Vacuum Storage Container for Zeiss, side entry holders | each | 475.00 | Add to Cart |
| 55300-34 | Vacuum Storage Container for Hitachi, side entry holders | each | 475.00 | Add to Cart |
| 55300-35 | Vacuum Storage Container for LEO, side entry holders | each | 475.00 | Add to Cart |
| 55300-36 | Vacuum Storage Container for Topcon, side entry holders | each | 475.00 | Add to Cart |
| 55300-40 | Port Plug for JEOL Specimen Stage Adapter (100X) | each | 190.00 | Add to Cart |
| 55300-41 | Port Plug for JEOL Specimen Stage Adapter(1210, 1220, 1230, 2010, 2010F, 3010, 3000F, 40100) | each | 190.00 | Add to Cart |
| 55300-42 | Port Plug for Philips Specimen Stage Adapter | each | 190.00 | Add to Cart |
| 55300-43 | Port Plug for Zeiss Specimen Stage Adapter | each | 190.00 | Add to Cart |
| 55300-44 | Port Plug for Hitachi Specimen Stage Adapter | each | 190.00 | Add to Cart |
| 55300-45 | Port Plug for LEO Specimen Stage Adapter | each | 190.00 | Add to Cart |
| 55300-46 | Port Plug for Topcon Specimen Stage Adapter | each | 190.00 | Add to Cart |
| 55300-50 | Chamber Gasket (2 required per unit) | each | 50.00 | Add to Cart |
| 55300-51 | Vacuum Pumping Station, 4 Station | each | 4365.00 | Add to Cart |
Plasma Etcher – Model PE 2000
The PE 2000 RF Plasma Etcher is specifically designed for reactive gas plasma etching and surface treatments. The unit is capable of 150 watts RF forward power at 13.56 MHz and up to four gas processing. The system is ideal for R&D applications where single sample processing is needed and total control of each process parameter is necessary.
Processes such as photoresist strips, BPSG removal, oxide and nitride layer etch, surface treatment of plastics and plasma cleaning are typical applications. Samples up to 6" diameter as well as irregular shaped substrates can be accommodated in the 200mm diameter vacuum chamber. A fully manual control system coupled with digital readouts and integral matching network with switching type power generator offer a wide range of experimental etch parameters
Special Features
- High etch rates at moderate power levels of 100 watts forward power can be achieved - 200 Å/minute for oxide and 500Å/minute for nitride.
- Stainless steel gas system with three-position feed provides maximum etch uniformity and the best possible utilization of the reactive species. Includes a separate vent to atmosphere line.
- Gas lines, fittings and stage assembly are all stainless steel construction and designed for corrosive applications – A Fomblin charged corrosive series rotary vane pump is included.
- Safety interlocks prevent mis-operation thereby protecting the user and the system.
- Manual controls, with digital readouts, make it possible to process in a wide range of vacuum pressure levels using an unlimited combination of reactive species including oxygen, fluorine and chlorine.
- System is supplied with two manual gas channels, but up to four mass flow channels can be added.
Specifications
| Vacuum Pump: | 431/min two stage direct drive corrosive series pump. System base pressure 20 millitorr; Typical operating pressure 50-200 millitorr |
| Vacuum Readout: | Capacitance manometer with digital front panel display in millitorr |
| Vacuum Chamber: | Quartz, 8" OD x 4" high |
| RF Power: | User variable 0-150 watt; 13.56 MHz frequency; manual tune; air cooled; solid state design |
| Process Timer: | Auto-termination of etch up to 99:99:59 |
| Input Power: | 115/230 VA, 50/60 Hz, 10/5 amps |
| Dimensions: | 20.25" W x 16" D x 15" H |
| System Vent: | Independent interlocked solenoid with connection for dry nitrogen |
| Gas Delivery: | Two channels independently controlled with precision needle valves and positive off solenoid valves. Normally closed solenoids eliminate any gas flow in the event of a power loss |
| Gas Control: | Dual independent needle valves with safety interlocked solenoid |
| Sample Table: | 6" diameter stainless steel |
| RF Readouts: | Digital front panel LCD meters for forward and reflected power |
| DC Bias: | Digital/front panel LCD meter |
| System Weight: | 60 pounds (without rotary pump) |
| Warranty: | 1 year on parts and labor |
| Options: | Stainless steel chamber with view ports; Mass Flow Controller System up to four channels; Cold Cathode Gauge |
Ordering
| 55310 | Plasma Etcher- Model PE 2000 | each | 43,973.00 | Add to Cart |
Spare Parts and Accessories for PE 2000
| 55312-03 | Stainless Steel Chamber with Viewport | each | 4650.00 | Add to Cart |
| 55310-2 | Chamber Gasket (2 required per unit) | each | 50.00 | Add to Cart |
Reactive Ion Etcher – Model RIE 2000
The RIE 2000 Reactive Ion Etcher is specifically designed for anisotropic etching of microelectronic devices. This R&D sized instrument is designed to simulate the operation of larger production instruments in process development and pilot production applications. The RIE 2000 is a turbo pumped system capable of reaching a base pressure of 10-6 torr. This low base pressure provides a clean etch environment and highly anisotropic etch without undercutting by eliminating residual species within the chamber prior to starting the etch process.
Wafers up to 6" diameter as well as irregular shaped substrates can be accommodated in the 200mm diameter vacuum chamber. A fully manual control system coupled with digital readouts on the RIE 2000 offer a wide range of experimental etch parameters, and is not limited by routine, automated processing ranges.
Special Features
- Manual controls make it possible to process in a wide range of vacuum pressure levels using an unlimited combination of reactive species.
- A stainless steel gas system with integral over the sample shower gas ring provides maximum etch uniformity and the best possible utilization of the reactive species.
- High etch rates at moderate power levels of 100 watts forward power can be achieved - greater than 200 Å/minute for oxide and 500Å/minute for nitride.
- System is supplied with two manual gas channels, but up to four mass flow channels can be added.
- Gas lines, fittings, and stage assembly are all stainless steel construction and designed for corrosive applications. Ceramic bearing turbomolecular pump and corrosive series rotary vane pump both are minimal maintenance, long life vacuum components.
- Safety interlocks prevent mis-operation thereby protecting the user and the system.
Specifications
| Vacuum Pump: | 70 1/sec Turbomolecular Pump |
| Gas Delivery: | Two channel, all stainless steel construction with integral gas shower. |
| System Vent: | Independent interlocked solenoid with connection for dry nitrogen. |
| RF Power: | User variable 0-200 watt; 13.56 MHz frequency, manual tune; air cooled/ solid state design. |
| Process Timer: | Auto-termination of etch up to 99:99:59. |
| Input Power: | 115/230 VA, 50/60 Hz, 10/5 amps |
| Dimensions: | 20.25" W x 16" D x 15" H |
| Vacuum Chamber: | quartz, 8" OD x 4" high |
| Vacuum Readout: | Capacitance Manometer with digital front panel display. |
| Gas Control: | Dual independent needle valves with safety interlocked solenoid. |
| Sample Table: | 6" diameter; water cooled |
| RF Readouts: | Digital front panel LCD meters for Forward and Reflected power. |
| DC Bias: | LED display on front panel. |
| System Weight: | 60 pounds (without rotary pump) |
| Warranty: | 1 year on parts and labor. |
| Options: | Stainless steel chamber with viewports; Mass Flow Controller System up to four channels; Cold Cathode Gauge |
Ordering
| 55320 | Reactive Ion Etcher- Model RIE 2000 | each | 52,500.00 | Add to Cart |
| 55310-2 | Chamber Gasket (2 required per unit) | each | 50.00 | Add to Cart |
Spare Parts and Accessories for RIE 2000
| 55320-01 | Quartz Chamber, 8” OD x 5” High | each | 950.00 | Add to Cart |
| 55320-02 | RF Shield for Quartz Chamber | each | 795.00 | Add to Cart |
| 55320-03 | Stainless Steel Chamber with View-Port | each | 4,500.00 | Add to Cart |
| 55320-04 | Oil-Free Diaphragm Pump to Back Turbo Pump (in place of rotary vane pump) | each | Add to Cart | |
| 55320-05 | Mass Flow Controller, One Channel | each | 7,123.00 | Add to Cart |
| 55320-06 | Mass Flow Controller, Two Channel | each | 10,750.00 | Add to Cart |
| 55320-07 | Mass Flow Controller, Four Channel | each | 16,500.00 | Add to Cart |
| 55320-08 | Cold Cathode Gauge for accurate reading of base pressure (requires stainless steel chamber 55320-03) | each | 5,600.00 | Add to Cart |
Ion Beam Sputter Deposition and
Etching System Model IBS/e
The Model IBS/e is a high vacuum thin film deposition system designed to precisely deposit sub-nanometer grain, conductive coatings onto specimens prior to examination in the electron microscope. Thin, conductive films are deposited onto specimens to prevent charging effects and to enhance contrast. Thin films are deposited using two ion beam sources directed at a target material, eliminating radiation or heating effects common with other coating techniques. Extremely thin, continuous metal or carbon films are deposited without risking damage to delicate features present on the specimen. Virtually any target material can be used for ion beam deposition with precise control over the deposition thickness. An optional third ion source allows specialized ion beam etching techniques to be employed. The ability to deposit amorphous, continuous films makes the IBS/e system ideal for high resolution electron microscopy techniques.
Applications
Specimens examined in high resolution electron microscopes utilizing field emission electron sources demand fine grain, ultra-thin conductive coatings for image capture and specimen analysis. Low voltage SEM specimens must frequently be coated with a conducting film to reduce charging and enhance contrast in images. Ultra-thin films on specimens for examination by both AFM and STM are sometimes needed to decrease surface resistivity, bind small particles to a substrate, and reduce distortion from tip/specimen interaction. All of these techniques require uniform thin films to be deposited on the specimens of interest without heat or radiation. Standard coating techniques such as DC diode, vacuum evaporation, and other thermally driven methods are incapable of handling these requirements. The IBS/e is capable of precisely depositing thin films without exposing specimens to damaging photon flux. Additional applications include producing SEM samples for “channeling contrast”, Electron Back Scatter Diffraction (EBSD) Patterns, Orientation Imaging Microscope (OIM) and multilayer deposition for research and development applications. Reactive etching and deposition can be achieved by introducing reactive gas such as oxygen or nitrogen through an optional micro-mixing valve.
Ion Sources
The IBS/e ion sources are specifically designed for simple operation and fast servicing. Both sources are directed at a target material which is sputtered with ejection energies of < 40 eV onto the specimen. Operating at 10 kV, the ion sources produce a beam flux of 15mA/cm2 to produce a uniform distribution over the entire specimen. Ion beam current is displayed digitally for quick evaluation of the operating conditions. The sources are easily dismounted through the vacuum chamber door. 24 hour factory Quick Exchange Service is available for the anode assemblies.
An etching ion source is optional for nano-matching samples prior to sputter deposition. Etching improves image contrast on highly polished cross section SEM samples and can expose interesting aspects of various types of biological samples.
Specimen Stage Control
The Independent Rotate and Tilt Stage (IRT) drives specimens under the sputtered material with a wide range of parameters. Both the tilt and rotate axes are independently controlled to uniformly coat specimens. The IRT allows directional or rotary shadowing at fixed angles as well as variable speed controls for both tilt and rotation. The variable tilt angle rate improves uniformity by decreasing the tilt rate as the tilt angle increases. Specimens can be parked at 180° to shield them during target oxide removal.
The standard specimen stage can accommodate 2" wafers as well as SEM mounts and TEM specimens. Using the Large Area Stage (LAS) accommodates specimen wafers up to 4" diameter for ion beam sputter deposition.
High Vacuum System
The Model IBS/e creates a clean, hydrocarbon free, high vacuum automatically using a turbomolecular pump. Vacuum level is displayed digitally using a cold cathode high vacuum gauge. The system reaches a base pressure of 10-7 torr within minutes, allowing oxide-free metal films to be deposited with the need for liquid nitrogen trapping.
Film Thickness Monitor
Monitoring the film thickness precisely is done with a quartz crystal thickness monitor (QCTM). The QTCM will precisely monitor and repeatably terminate the sputtering process at preset film thickness or present time, whichever occurs first.
Targets
Four different target materials are selectable for deposition without breaking vacuum. Each target can be rotated into the sputter position simply by rotating a thumbwheel. The ability of the IBS/e to produce oxide free coatings without liquid nitrogen trapping allow refractory metals such as chromium, tungsten, and tantalum to be deposited without problems.
Typical Target Materials
- Chromium
- Tungsten
- Tantalum
- Platinum
- Iridium
- Carbon
- Gold
- Gold/Palladium
- Palladium
- Silver
Specifications
Vacuum System
| Roughing Pump: | 40 I/m N2 |
| Turbo Pump: | 250 I/s/ N2 |
| Base Pressure: | 10-7 torr |
| Operating Pressure: | x 10-5 torr (10 to 15 minutes) |
| Vacuum Gauge: | Cold cathode |
Ion Sources
| Beam Energy: | 2.5kV to 10 kV |
| Beam Flux: | 15mA/cm2 |
IRT Stage
| Tilt Range - Deposition Mode: | 0 to +/- 99° |
| Tilt Range - Etch Mode: | 0 to +/- 99° |
| Tilt Range - With Large Area Stage: | 0 to +/- 17 ° |
| Specimen Stage: | 2" Standard; 4" Optional |
| Tilt Angle Rate: | Variable |
| Rotational Speed: | 0 to 40 RPM |
Gas
| Source Gas: | Ar, 99.999% pure |
| Pressure: | 2 sccm @ 5-7 PSI |
| Vent Gas: | N2 @ 5 PSI |
Power/Utilities
| 110 VAC / 15 A | 50/60 Hz |
| 220 VAC / 7.5 A | 50/60 Hz |
Ordering
Please specify VOLTAGE option when ordering (120 or 240 VAC)
| 55330 | Ion Beam Sputter Deposition and Etching System Model BS/e | each | 67500.00 | Add to Cart |
Spare Parts and Accessories for IBS/e
| 55332-01 | Etching Ion Source (mounted in IBS/e when purchased) | each | 6200.00 | Add to Cart |
| 55332-02 | Replacement Source Anode Assembly | each | 2895.00 | Add to Cart |
| 55332-03 | Large Area Stage, 4” (1000mm) | each | 850.00 | Add to Cart |
| 55332-Ar | Ar Regulator | each | 625.00 | Add to Cart |
| 55332-N2 | N2 Regulator | each | 625.00 | Add to Cart |
Specimen Carriers
| 55332-10 | Standard, 1.25” diameter platform carrier | each | 150.00 | Add to Cart |
| 55332-11 | Standard, 2” diameter platform carrier | each | 200.00 | Add to Cart |
| 55332-12 | 1⁄8” diameter pin, 1.25” diameter | each | 200.00 | Add to Cart |
| 55332-13 | 4 position, 10mm stub diameter, 1.25” diameter | each | 160.00 | Add to Cart |
| 55332-14 | 3 position, 12mm stub diameter, 1.25” diameter | each | 160.00 | Add to Cart |
| 55332-15 | Stub for Hitachi FESEM Specimen Mount | each | 92.00 | Add to Cart |
| 55332-16 | Flat Pinch Specimen Carrier, 1.25” diameter | each | 299.00 | Add to Cart |
Targets
| 55332-30 | Potassium Bromide Scintillator (for beam observation) | each | 90.00 | Add to Cart |
| 55332-31 | 2Gold, 0.008” foil | each | 700.00 | Add to Cart |
| 55332-32 | Platinum, 0.020” foil | each | 500.00 | Add to Cart |
| 55332-33 | 2Palladium, 0.020” foil | each | 500.00 | Add to Cart |
| 55332-34 | 2Gold/Palladium, 0,020” foil | each | 720.00 | Add to Cart |
| 55332-35 | Carbon, 0.125” | each | 105.00 | Add to Cart |
| 55332-36 | Tantalum, 0.125” | each | 225.00 | Add to Cart |
| 55332-37 | Tungsten, 0.125” | each | 225.00 | Add to Cart |
| 55332-38 | Chromium, 0.125” | each | 150.00 | Add to Cart |
| 55332-39 | Iridium, 0.020” | each | 350.00 | Add to Cart |
| 55332-40 | 2Silver, 0.020 foil | each | 200.00 | Add to Cart |
| 55332-41 | Nickel, 0.125” | each | 175.00 | Add to Cart |
2 Not recommended for high resolution imaging All others suggested for magnification < 200k
Retrofit Options
| 55332-50 | Quartz Crystal Thickness Monitor | each | 5850.00 | Add to Cart |
| 55332-51 | SI 08 Ion Source (SI08 Ion Source retrofits to a second sputtering or etching port. Needle Valve, connecting Ar tube and SHV high voltage cable included) | each | 6100.00 | Add to Cart |
| 55332-52 | SI O8 Ion Source Mating Flange | each | 205.00 | Add to Cart |
| 55332-53 | E IRT Stage for IBS/e | each | 4650.00 | Add to Cart |
| 55332-54 | E IRT Stage Controller for IBS/e | each | 2450.00 | Add to Cart |
Spare Parts
| 55330-01 | SI O8 Source Spare Pack (6 sets). Includes: 6 qty. Front Cathodes / 6 qty. Rear Cathodes / 36 qty. Calibrated Ceramic Insulators | each | 950.00 | Add to Cart |
| 55330-02 | Front Shield for SI O8 Ion Source | each | 425.00 | Add to Cart |
| 55330-03 | Rear Shield for SI O8 Ion Source | each | 375.00 | Add to Cart |
| 55330-04 | Anode for SI O8 Ion Source | each | 450.00 | Add to Cart |
| 55330-05 | HV Conductor for SI O8 Ion Source | each | 99.00 | Add to Cart |
| 55330-06 | Rear Cathode for SI O8 Ion Source | each | 38.00 | Add to Cart |
| 55330-07 | Front Cathode for SI O8 Ion Source | each | 38.00 | Add to Cart |
| 55330-08 | IBS Chamber /eIRT O-ring Set | each | 44.00 | Add to Cart |
| 55330-09 | SI O8 Source Alignment Tool | each | 275.00 | Add to Cart |
| 55330-10 | Calibrated Ceramic Insulator (6 qty.) | each | 90.00 | Add to Cart |
| 55330-11 | RP Mist Eliminator Cartridge | each | 72.00 | Add to Cart |
| 55330-12 | High Voltage Cable (for model IBS TM200) | each | 250.00 | Add to Cart |
| 55330-13 | Target Blanks (Al) | each | 32.00 | Add to Cart |