Graphene On Ultra-Flat Thermal SiO2, 3-5 Layers
Characteristics
- Four thicknesses of CVD graphene
- Available in either 1, 2, 3-5 or 6-8 layers
- TEM Substrate
- The Ultra-flat Thermal SiO2 Substrate consists of a 200 nm thermally grown SiO2 film on an ultra-flat silicon wafer with a normal thickness of 675 µm. The size is 5 mm x 5 mm.
- Graphene coverage of the TEM grid is better than 75%
Specifications
| Type |
Thickness of the Graphene |
Transparency |
TEM Grid/AFM Substrate |
Support Film |
| 3-5 Layers |
1.0-1.7 nm |
~85.8-90.4% |
Ultra-Flat Silicon |
Thermally Grown SiO2 |
SKU:
3GUFSiO2-5
Pack:
5 Pack