The Reactive Ion Etcher (RIE) is a table-top plasma chemistry reactor designed to provide anisotropic etch plasma technology at a moderate cost. This simple-to-operate instrument can perform repeatable plasma chemical reactions with a minimum of automation. All controls are manually entered into and monitored by a touch-screen interfaced control system which is equipped with automatic monitors and interlock controls to protect the equipment and the samples in the reactor. The RIE requires cooling of the stage. A simple water recirculator is typically sufficient for this task. A small water chiller option is also available for this system. Vacuum is supplied by an integrated turbo pump.
Introduction to Anisotropic Etching
Wet etching of samples is not only dangerous, in many cases it causes undercutting due to the isotropy of the etch. The Reactive Ion Etcher (RIE) uses dry etching to create an anisotropic etch - meaning that the etch is uni-directional. For laboratory applications, the typical plasma etcher has a "barrel" design, or in other words, a cylindrical or barrel geometry to the reaction chamber. One feature of this design is that any point on the surface to be etched can be approached with equal probability from all directions, leading to an etch that is described as being "isotropic". For most if not many applications generally, an isotropic design is probably the design of choice. But in some instances, such as the removal of a passivization layer from an electronic device, isotropic etching always results in undercutting, and when the lines are below a certain point in width, such processing completely undercuts the lines leading to the layers literally falling off. But because for a "barrel" design, one can achieve respectable etch rates at relatively low power, the systems can be built and sold at lower prices.
- Final package removal
- Glass passivation layer removal
- Deep etching
- Removal of contaminants
RIE System Specifications
- Table top design
- LED touch screen for ease of use
- Small footprint: 15" L X 21" W X14" H
- 13.56 MHz RF Plasma
- 110/240VAC, 50/60Hz
- 10 to 200 Watts continuous power
- Dual gas input
- Manual gas and pressure control
- Process timer for reproducible runs
- Shielded Quartz chamber
- Chamber size 10", 8" sample stage
- Works with O2, CF4, Ar and other gasses
- Complete with Turbo System and controller
- 75 lbs
- Reactive Ion Etcher
- Quartz Chamber
- Vacuum hose
The system does include a simple water circulator. We would recommend that a small water chiller be used which will provide a reliable flow of cool water.
Note: Item 55320 has been replaced by items 55320-01, 55320-02, 55320-03 and 55320-04.