Ultra-Flat Silicon Wafer 4"
These ultra-flat wafers can be used for substrate studies or as substrate for AFM and SEM samples by cleaving the wafer.
Specifications
| |
4" |
| Material: |
Silicon |
| Diameter: |
100 mm |
| Orientation: |
<100> |
| Type/Dopant: |
P/Boron |
| Grade: |
Prime/CZ Virgin |
| Growth Method: |
CZ |
| Resistivity: |
10-20 Ohm-cm |
| Thickness: |
525 µm ±20 µm |
| TTV: |
<4.00µm |
| SFPD: |
<2.0µm |
| Warp: |
≤30µm |
| Bow: |
≤30µm |
| Particles: |
≤20@≥0.3 µm |
| Front Surface: |
Polished |
| Back Surface: |
Etched |
| Flat: |
2 per SEMI Standard |
| Site Flatness: |
<2.0 µm |
| Roughness: |
Typically 2-3Å |