Ultra-Flat Silicon Wafer 4"

These ultra-flat wafers can be used for substrate studies or as substrate for AFM and SEM samples by cleaving the wafer.


Material: Silicon
Diameter: 100 mm
Orientation: <100>
Type/Dopant: P/Boron
Grade: Prime/CZ Virgin
Growth Method: CZ
Resistivity: 10-20 Ohm-cm
Thickness: 525 µm ±20 µm
TTV: <4.00µm
SFPD: <2.0µm
Warp: ≤30µm
Bow: ≤30µm
Particles: ≤20@≥0.3 µm
Front Surface: Polished
Back Surface: Etched
Flat: 2 per SEMI Standard
Site Flatness: <2.0 µm
Roughness: Typically 2-3Å
SKU: 71893-01
Pack: Each