These silicon wafers can be used for substrate studies or as substrate for AFM and SEM samples by cleaving the wafer.
Specifications
| |
1" |
2" |
3" |
4" |
6" |
| Material: |
Silicon |
Silicon |
Silicon |
Silicon |
Silicon |
| Diameter: |
25 mm |
50 mm |
76 mm |
100 mm |
150 mm |
| Orientation: |
<100> |
<100> |
<111> |
<100> |
<100> |
| Resistance: |
1-30 Ohms |
1-30 Ohms |
1-30 Ohms |
1-30 Ohms |
1-30 Ohms |
| Type P: |
Boron - 1 primary flat |
Boron - 1 primary flat |
Boron - 1 primary flat |
Boron - 1 primary flat |
Boron - 1 primary flat |
| SiO2 top coating: |
None |
None |
None |
None |
None |
| Wafer Thickness: |
10-12 mill
(254-304µm) |
9-13 mill
(230-330µm) |
13.6-18.5 mill
(345-470µm) |
18.7-22.6 mill
(475-575µm) |
23.6-25.2 mill
(600-690µm) |
| Roughness: |
2 nm |
2 nm |
2 nm |
2 nm |
2 nm |
| TTV: |
<2 0µm |
|
|
|
|
| Polished: |
on one side |
on one side |
on one side |
on one side |
on one side |